ds23018 rev. 9 - 2 1 of 2 sbl3030pt - sbl3060pt www.diodes.com diodes incorporated sbl3030pt - sbl3060pt 30a schottky barrier rectifier features a b e g j l m n p q k s m h r d c maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection application mechanical data case: molded plastic plastic material : ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: matte tin finish solderable per mil-std-202, method 208 polarity: as marked on body marking: type number weight: 5.6 grams (approx.) single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sbl 3030pt sbl 3035pt sbl 3040pt sbl 3045pt sbl 3050pt sbl 3060pt unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current @ t c = 95 c (note 1) i o 30 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 275 a forward voltage drop @ i f = 15a, t c = 25 c v fm 0.55 0.70 v peak reverse current @ t c = 25 c at rated dc blocking voltage @ t c = 100 c i rm 1.0 75 ma typical total capacitance (note 2) c t 1100 pf typical thermal resistance junction to case (note 1) r jc 2.0 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. to-3p dim min max a 1.88 2.08 b 4.87 5.13 c 21.25 21.75 d 19.60 20.10 e 2.10 2.40 g 0.51 0.76 h 15.75 16.25 j 1.93 2.18 k 2.90 3.20 l 3.78 4.38 m 5.20 5.70 n 1.12 1.22 p 1.90 2.16 q 2.93 3.22 r 11.70 12.80 s 4.40 typical all dimensions in mm
ds23018 rev. 9 - 2 2 of 2 sbl3030pt - sbl3060pt www.diodes.com 0.1 1.0 10 100 0.2 0.4 0.6 0.8 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g .2 t y pical fwd characteristics per element sbl3030pt - sbl30450pt sbl3050pt - sbl3060pt 0 50 100 150 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-repetitive forward sur g e current 8.3 ms single half-sine-wave jedec method 100 1000 4 000 0.1 1.0 10 100 c , junction capacitance (pf) t v , reverse voltage (v) r fi g .4 t y pical capacitance per element t = 25c j f = 1mhz 0.01 0.1 1.0 10 100 i , instantaneous reverse current (a) r 04080 percent of peak reverse voltage (%) fig. 5 typical reverse characteristics per element t = 100c c t = 75c c t = 25c c 120 0 6 12 24 30 18 0 50 100 i , average rectified current (a) (av) t , case temperature (c) c fig. 1 forward derating curve 15 0
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